b120-m3, b130-m3, b140-m 3, b150-m3, B160-M3 www.vishay.com vishay general semiconductor revision: 09-dec-13 1 document number: 89926 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 surface mount schottky barrier rectifier features ? low profile package ? ideal for automated placement ? guardring for overvoltage protection ? low power losses, high efficiency ? low forward voltage drop ? high surge capability ? meets msl level 1, per j-st d-020, lf maximum peak of 260 c ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 typical applications for use in low voltage, high frequency inverters, freewheeling, dc/dc converte rs, and polarity protection applications. note ? these devices are no t aec-q101 qualified mechanical data case: do-214ac (sma) ? molding compound meets ul 94 v-0 flammability rating base p/n-m3 - rohs-co mpliant, commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 ? m3 suffix meets jesd 201 class 2 whisker test polarity: color band denotes the cathode end primary characteristics i f(av) 1.0 a v rrm 20 v, 30 v, 40 v, 50 v, 60 v i fsm 30 a v f 0.52 v, 0.75 v t j max. 125 c, 150 c package do-214ac (sma) diode variation single die do-214ac ( s ma) maximum ratings (t a = 25 c unless otherwise noted) parameter symbol b120 b130 b140 b150 b160 unit device marking code b12 b13 b14 b15 b16 maximum repetitive pe ak reverse voltage v rrm 20 30 40 50 60 v maximum average forward rectified current (fig. 1) i f(av) 1.0 a peak forward surge current 8. 3 ms single ha lf sine-wave superimposed on rated load i fsm 30 a voltage rate of change (rated v r ) dv/dt 10 000 v/s operating junction temperature range t j -65 to +125 -65 to +150 c storage temperature range t stg -65 to +150 c
b120-m3, b130-m3, b140-m 3, b150-m3, B160-M3 www.vishay.com vishay general semiconductor revision: 09-dec-13 2 document number: 89926 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width ? 40 ms note (1) p.c.b. mounted with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - maximum forward current derating curve fig. 2 - forward power loss characteristics electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol b120 b130 b140 b150 b160 unit maximum instantaneous forward voltage 1.0 a v f (1) 0.52 0.75 v maximum reverse current at rated v r t a = 25 c i r (2) 0.2 ma t a = 100 c 6.0 5.0 thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol b120 b130 b140 b150 b160 unit typical thermal resistance r ? ja (1) 95 c/w r ? jl (1) 30 ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode b140-m3/61t 0.064 61t 1800 7" diameter plastic tape and reel b140-m3/5at 0.064 5at 7500 13" diameter plastic tape and reel re s i s tive or inductive load average forwar d rectified current (a) lead temperature (c) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 p.c.b. mounted on 0.2 " x 0.2 " (5.0 mm x 5.0 mm) copper pad area s b120 thru b140 b150 and b160 d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 0.8 d = 1.0 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 average forward current average power lo ss (w) d = t p /t t p t b120 thru b140
b120-m3, b130-m3, b140-m 3, b150-m3, B160-M3 www.vishay.com vishay general semiconductor revision: 09-dec-13 3 document number: 89926 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - forward power loss characteristics fig. 4 - typical instantaneous forward characteristics fig. 5 - typical instantaneous forward characteristics fig. 6 - typical instantaneous forward characteristics fig. 7 - typical reverse leakage characteristics fig. 8 - typical j unction capacitance 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 average forward current (a) average power lo ss (w) d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 0.8 d = 1.0 d = t p /t t p t b150 and b160 40 30 20 10 0 1 10 100 number of cycle s at 50 hz peak forwar d s urge current (a) in s tantaneou s forward voltage (v) in s tantaneou s forwar d current (a) 10 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 0.01 t j = 150 c t j = 125 c t j = 25 c b120 thru b140 in s tantaneou s forward voltage (v) in s tantaneou s forward current (a) 10 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 0.01 t j = 150 c t j = 125 c t j = 25 c b150 and b160 100 000 10 000 1000 100 10 10 20 30 40 50 60 70 80 90 100 1 0.1 percent of rated peak rever s e voltage (%) in s tantaneou s rever s e current (a) t j = 150 c t j = 125 c t j = 25 c b120 thru b140 b150 and b160 0.1 1 10 100 1000 100 10 rever s e voltage (v) junction capacitance (pf) b120 thru b140 b150 and b160 t j = 25 c f = 1.0 mhz v s ig = 50 mv p-p
b120-m3, b130-m3, b140-m 3, b150-m3, B160-M3 www.vishay.com vishay general semiconductor revision: 09-dec-13 4 document number: 89926 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package outline dimensions in inches (millimeters) 0.008 (0.203) 0.194 (4.93) 0.208 (5.28) 0.157 (3.99) 0.177 (4.50) 0.100 (2.54) 0.110 (2.79) 0.078 (1.98) 0.090 (2.29) 0.006 (0.152) 0.012 (0.305) 0.049 (1.25) 0.065 (1.65) cathode band 0 (0) do-214ac ( s ma) mountin g pad layout 0.074 (1.88) max. 0.208 (5.28) ref. 0.066 (1.68) min. 0.060 (1.52) min. 0.030 (0.76) 0.060 (1.52)
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